2N4401 2N4401 npn general purpose si-epitaxial planar transistors si-epitaxial planar-transistoren fr universellen einsatz npn version 2006-09-12 dimensions - ma?e [mm] power dissipation verlustleistung 625 mw plastic case kunststoffgeh?use to-92 (10d3) weight approx. ? gewicht ca. 0.18 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped in ammo pack standard lieferform gegurtet in ammo-pack maximum ratings (t a = 25c) grenzwerte (t a = 25c) 2N4401 collector-emitter-volt. ? kollektor-emitter-spannung b open v ceo 40 v collector-base-voltage ? kollektor-basis-spannung e open v cbo 60 v emitter-base-voltage ? emitter-basis-spannung c open v ebo 6 v power dissipation ? verlustleistung p tot 250 mw 1 ) collector current ? kollektorstrom (dc) i c 600 ma junction temperature ? sperrschichttemperatur storage temperature ? lagerungstemperatur t j t s -55...+150c -55?+150c characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. dc current gain ? kollektor-basis-stromverh?ltnis 2 ) i c = 0.1 ma, v ce = 1 v i c = 1 ma, v ce = 1 v i c = 10 ma, v ce = 1 v i c = 150 ma, v ce = 1 v i c = 500 ma, v ce = 2 v h fe h fe h fe h fe h fe 20 40 80 100 40 ? ? ? ? ? ? ? ? 300 ? collector-emitter saturation voltage ? kollektor-emitter-s?ttigungsspg. 2 ) i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma v cesat v cesat ? ? ? ? 0.40 v 0.75 v base-emitter saturation voltage ? basis-emitter-s?ttigungsspannung 2 ) i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma v besat v besat 0.75 v ? ? ? 0.95 v 1.2 v 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 tested with pulses t p = 300 s, duty cycle 2% ? gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% ? diotec semiconductor ag http://www.diotec.com/ 1 16 18 9 2 x 2.54 c be
2N4401 characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. collector-base cutoff current ? kollektor-basis-reststrom v ce = 35 v, v eb = 0,4 v i cbv ? ? 100 na emitter-base cutoff current ? emitter-basis-reststrom v ce = 35 v, v eb = 0,4 v i ebv ? ?- 100 na gain-bandwidth product ? transitfrequenz i c = 20 ma, v ce = 10 v, f = 100 mhz f t 250 mhz ? ? collector-base capacitance ? kollektor-basis-kapazit?t v cb = 5 v, i e = i e = 0, f = 1 mhz c cbo ? ? 6.5 pf emitter-base capacitance ? emitter-basis-kapazit?t v eb = 0.5 v, i c = i c = 0, f = 1 mhz c ebo ? ? 30 pf switching times ? schaltzeiten (between 10% and 90% levels) delay time rise time v cc = 30 v, v eb = 2 v i c = 150 ma, i b1 = 15 ma t d ? ? 15 ns t r ? ? 20 ns storage time fall time v cc = 30 v, i c = 150 ma, i b1 = i b2 = 15 ma t s ? ? 225 ns t f ? ? 30 ns thermal resistance junction to ambient air w?rmewiderstand sperrschicht ? umgebende luft r tha < 200 k/w 1 ) recommended complementary pnp transistors empfohlene komplement?re pnp-transistoren 2n4403 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 http://www.diotec.com/ ? diotec semiconductor ag
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